Determination of In concentration in pseudomorphic InxGa1-xN quantum wells based on convergent-beam electron diffraction
Identifieur interne : 00A850 ( Main/Repository ); précédent : 00A849; suivant : 00A851Determination of In concentration in pseudomorphic InxGa1-xN quantum wells based on convergent-beam electron diffraction
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Abstract
An approach based on the technique of convergent-beam electron diffraction (CBED) has been used to determine the elemental composition of a pseudomorphic GaN/InxGa1-xN/GaN quantum-well structure on the nanometer scale. Areas of triangles formed by intersecting higher order Laue-zone (HOLZ) lines are highly sensitive to lattice-parameter variations. By calculating the ratio of triangle areas, the local In concentration is estimated to within ±0.5% once lattice expansion in the growth direction has been taken into account. Moreover, shifts in the HOLZ-line positions as the CBED probe is moved along the quantum well provide a simple and rapid indication of local fluctuations in In content. The technique is applicable to other pseudomorphically strained epitaxial layers. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Determination of In concentration in pseudomorphic In<sub>x</sub>Ga<sub>1-x</sub>N quantum wells based on convergent-beam electron diffraction</title><author><name sortKey="Stirman, J N" uniqKey="Stirman J">J. N. Stirman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Center for Solid State Science, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Takeguchi, M" uniqKey="Takeguchi M">M. Takeguchi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Center for Solid State Science, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Mccartney, M R" uniqKey="Mccartney M">M. R. Mccartney</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Center for Solid State Science, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Smith, David J" uniqKey="Smith D">David J. Smith</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Center for Solid State Science, Arizona State University, Tempe</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0055831</idno><date when="2004-01-26">2004-01-26</date><idno type="stanalyst">PASCAL 04-0055831 AIP</idno><idno type="RBID">Pascal:04-0055831</idno><idno type="wicri:Area/Main/Corpus">00C078</idno><idno type="wicri:Area/Main/Repository">00A850</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron diffraction</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Lattice parameters</term><term>Nitrogen compounds</term><term>Quantum wells</term><term>Scanning transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865F</term><term>6114L</term><term>Etude expérimentale</term><term>Puits quantique</term><term>Diffraction électron</term><term>Gallium composé</term><term>Azote composé</term><term>Indium composé</term><term>Microscopie électronique balayage transmission</term><term>Paramètre cristallin</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An approach based on the technique of convergent-beam electron diffraction (CBED) has been used to determine the elemental composition of a pseudomorphic GaN/In<sub>x</sub>Ga<sub>1-x</sub>N/GaN quantum-well structure on the nanometer scale. Areas of triangles formed by intersecting higher order Laue-zone (HOLZ) lines are highly sensitive to lattice-parameter variations. By calculating the ratio of triangle areas, the local In concentration is estimated to within ±0.5% once lattice expansion in the growth direction has been taken into account. Moreover, shifts in the HOLZ-line positions as the CBED probe is moved along the quantum well provide a simple and rapid indication of local fluctuations in In content. The technique is applicable to other pseudomorphically strained epitaxial layers. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Determination of In concentration in pseudomorphic In<sub>x</sub>Ga<sub>1-x</sub>N quantum wells based on convergent-beam electron diffraction</s1></fA08><fA11 i1="01" i2="1"><s1>STIRMAN (J. N.)</s1></fA11><fA11 i1="02" i2="1"><s1>TAKEGUCHI (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>MCCARTNEY (M. R.)</s1></fA11><fA11 i1="04" i2="1"><s1>SMITH (David J.)</s1></fA11><fA14 i1="01"><s1>Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>490-492</s1></fA20><fA21><s1>2004-01-26</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0055831</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>An approach based on the technique of convergent-beam electron diffraction (CBED) has been used to determine the elemental composition of a pseudomorphic GaN/In<sub>x</sub>Ga<sub>1-x</sub>N/GaN quantum-well structure on the nanometer scale. Areas of triangles formed by intersecting higher order Laue-zone (HOLZ) lines are highly sensitive to lattice-parameter variations. By calculating the ratio of triangle areas, the local In concentration is estimated to within ±0.5% once lattice expansion in the growth direction has been taken into account. Moreover, shifts in the HOLZ-line positions as the CBED probe is moved along the quantum well provide a simple and rapid indication of local fluctuations in In content. 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